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We have been able to produce electron cyclotron resonance plasmas for large-area processing in arched magnetic mirrors. Applying the plasmas to deposition of titanium dioxide thin films by reactive sputtering, we study the uniformity of deposition and crystal structures of the thin films by controlling the state of the plasma. Sputtering voltage and target current are varied separately by changing the power of microwave. The deposition rate of films is almost uniform within an area of magnets forming the mirrors. It is slightly higher at the center and lower at the edges of target. The crystal structure of thin films is changed by the sputtering conditions. At the slow deposition rates of films, the films are mostly in the rutile phase. At the high deposition rates, the anatase phase shows up together with the rutile one. We suppose that the crystal structure is related to the plasma profile.

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