No abstract

High power devices can generate large amount of heat dissipation that limits severely their power handling capability. In this paper, we propose intensive investigations of the electro-thermal characteristics of lateral nDMOS transistors processed in a 0.7 pm CMOS based smart power technology. In particular, it is demonstrated, both experimentally and theoretically, that the thermal management improves substantially when a layer of an electroplated copper is deposited on top of the power device. The latter serves as a heat sink to help dissipate the heat generated during operating conditions. More importantly, we have derived a simple but yet potential theoretical model which predictions are in complete agreement with experimental and simulation results.

No abstract

No abstract

No abstract