The low‐temperature‐processed amorphous oxide semiconductors (AOSs) exhibit remarkable potentials in large‐area, flexible, and hybrid‐integrated electronics, while the performance and stability of AOS devices highly depend on the proper manipulation of abundant native defects in AOS, especially for AOS Schottky barrier diode (SBD) with the naturally defective metal–semiconductor interface. Here, a hydrogenated‐InGaZnO SBD with a hydrogen‐rich passivation layer (PL) is reported. With the hydrogenation effectively suppressing interface defects and meanwhile donating electrons, a near‐ideal Schottky contact and more‐conductive drift region are simultaneously achieved, as proven by the perfect ideality factor of 1.08, a Schottky barrier height of 0.87 eV, a high rectification ratio ≈4.5 × 108. Moreover, such sophisticated hydrogenation is self‐stabilized by the bilayer structure of PL, contributing to the record‐high stabilities under harsh environmental and electrical stresses.

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The degradation and breakdown behaviors of top-gate self-aligned a-InGaZnO thin-film transistors (TFTs) under dynamic current stresses (DCSs) were systematically investigated. Both linear-and saturation-regime DCSs were found to be capable of causing the self-heating degradations, including the negative shift of threshold voltage, the increase of subthreshold slope and drain current. While the linear DCS eventually forms a conductor-like channel, the saturation DCS causes an additional hot carrier (HC) effect to form a defective drain regions of high energy barrier, disconnecting the 'conductor channel' from the drain side.

The nonideal reverse leakage current of amorphous indium-gallium-zinc-oxide (a-IGZO) Schottky barrier diode was comparatively investigated with and without the passivation layer. Based on experimental and simulation results, the underlying mechanism was revealed as the trap-assisted tunneling along the defective a-IGZO sidewall. The edge termination structures, dubbed “sidewall covering,” and “edge capping” were specifically proposed to mitigate the edge electric field and, thus, suppress the nonideal leakage current. This enables the simultaneously improved ideality factor ( n) and Schottky barrier height ( ΦB), respectively, of 1.16 and 1.13 eV, together with the noticeably enhanced breakdown voltage.