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The GigaBit Laser Driver (GBLD) is a radiation tolerant ASIC which is part of the GigaBit Transceiver (GBT) chipset. It is aimed to drive both edge emitting and VCSEL laser diodes at a data rate in excess of 5 Gb/s. The GBLD can provide a modulation current up to 24 mA and a bias current up to 43 mA. Pre-and de-emphasis functions are implemented to compensate for high external capacitive loads and asymmetric laser response. The chip is designed in a 130 nm CMOS technology and is powered by a single 2.5 V supply.

A 40-nm CMOS wideband high-IF receiver is presented in this paper. The low-noise transconductance amplifier (LNTA) uses dual noise cancellation in order to improve its noise figure. The LNTA has also a folded-cascode structure to increase its output impedance and prepare for a current-mode passive mixer. This structure is merged into the output stage of the LNTA, so there is no need for extra transistors. Additionally, a modified charge-sharing bandpass filter with cross-connected transconductors to boost Q-factor is proposed and discussed. The highest voltage gain achieved by the receiver (RX) is 30 dB. The RX noise figure is 3.3 dB at the maximum gain, while the IIP3 is −2.5 dBm at 1 GHz. The area of the receiver is very competitive for the wide band considered, merely 0.137 mm 2. The RX and clock generation circuitry drain 25 mA from a 0.9-V supply.