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1Cost and cycle time of multiple patterning -especially for more than 2x 2 Process control on key parameters such as overlay, CD control, LWR with multiple patterning 3 EUV Source power 4 EUV Mask Infrastructure (defect inspection and verification, mitigation, mask lifetime) Defect free EUV mask blanks, mask availability 5 EUV resist and/or process that meets sensitivity, resolution, LER requirements 1 6 DSA defecti ity and positional accuracy ABSTRACT Lithography process window (PW) and CD uniformity (CDU) requirements are being challenged with scaling across all device types. Aggressive PW and yield specifications put tight requirements on scanner performance, especially on focus budgets resulting in complicated systems for focus control. In this study, an imec N10 Logic-type test vehicle was used to investigate the E95 bandwidth impact on six different Metal 1 Logic features. The imaging metrics that track the impact of light source E95 bandwidth on performance of hot spots are: process window (PW), line width roughness (LWR), and local critical dimension uniformity (LCDU).In the first section of this study, the impact of increasing E95 bandwidth was investigated to observe the lithographic process control response of the specified logic features. In the second section, a preliminary assessment of the impact of lower E95 bandwidth was performed. The impact of lower E95 bandwidth on local intensity variability was monitored through the CDU of line end features and the LWR power spectral density (PSD) of line/space patterns. The investigation found that the imec N10 test vehicle (with OPC optimized for standard E95 bandwidth of300fm) features exposed at 200fm showed pattern specific responses, suggesting areas of potential interest for further investigation.

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