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In this paper, we propose a one-dimensional model that combines photoelectricity, piezoelectricity, and photothermal effects. The influence of ultraviolet light on the electromechanical coupling properties of GaN nanowires is investigated. It is shown that, since the ultraviolet photon energy is larger than the forbidden gap of GaN, the physical fields in a GaN nanowire are sensitive to ultraviolet. The light-induced polarization can change the magnitude and direction of a piezoelectric polarization field caused by a mechanical load. Moreover, a large number of photogenerated carriers under photoexcitation enhance the current density, whilst they shield the Schottky barrier and reduce rectifying characteristics. This provides a new theoretical nanoarchitectonics approach for the contactless performance regulation of nano-GaN devices such as photoelectric sensors and ultraviolet detectors, which can further release their great application potential.

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GaN is an excellent material choice for power devices due to its excellent properties such as super wide bandgap width and high electron mobility. However, the problem of temperature affects the thermo reliability and hinders the potential of GaN devices. In this paper, the electrical properties of GaN under temperature have been studied by the combination of numerical simulation and experimental research. The electric current change and electrical resistivity of polarized and depolarized GaN semiconductor samples were tested in an environment-test cabinet. Based on the influence of temperature, the expression of the resistivity curve vs temperature was established for polarized and depolarized GaN samples. It is shown that the resistivity model predictions are consistent with experimental results. The I–V characteristic curves under different temperatures were also measured. Thus, such a model is instructive to the reliable design of GaN high-temperature devices. The findings will be instructive to the optimal design of GaN electronic components.

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