The oxidation of an Al͑111͒ single-crystal surface induced by 100 eV electron bombardment in water vapor at room temperature has been studied using x-ray photoemission spectroscopy and electron-energy-loss spectroscopy. Electron bombardment significantly increases the growth rate and changes the observed growth-rate law in comparison to the oxidation without the electron beam. The aluminum oxide film grows with linear rather than parabolic time-dependent kinetics up to a thickness of about 25 Å. After reaching this thickness, the growth rate slows down significantly. During oxidation the oxide film becomes electrically charged on its surface and the normal electric field in the oxide remains constant. The results are discussed in the framework of a Cabrera-Mott type oxidation mechanism.

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Compact UHV system for fabrication and in situ analysis of electron beam deposited structures using a focused low energy electron beam Rev. Sci. Instrum. 77, 053702 (2006); High power, high uniformity strip electron gun design, simulation and performance Rev.A microwave plasma cathode electron gun for ion beam neutralization Rev.A low-energy electron gun for the energy range of 5-100 eV providing a uniform and high electron flux over a circular surface area of several cm 2 has been designed and tested. Focusing elements allow one to vary the beam diameter according to experimental needs. The uniform current densities make it suitable for the study of electron stimulated surface chemistry and thin-film production.