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Lattice distortions perpendicular to the surface in thin surface layers of ion-implanted (111) silicon crystals have been mapped as a function of depth and lateral position with resolutions of 0.05 and 0.65gm, respectively. X-ray triple-crystal diffractometry data were collected near the fundamental 111 and satellite reflections from samples with periodic superstructure modulations in the lateral direction. 300 keV B + ions implanted through surface mask windows are found to produce lattice distortions in a very thin layer of 0.15 gm thickness at 1.05 gm depth below the surface, with interplanar lattice spacings normal to the surface increased by several parts in 104 . The distortions are appreciably extended in the lateral direction, suggesting diffusion of the ions. A 0.5 gm-thick thermaloxide strip is found to contract the interplanar spacing of substrate silicon crystal under the strip region by a few parts in 104, while the strain field created by the parallel oxide edges extends beyond a depth of 3 Bm. A practical procedure is also described for arriving at a solution of the phase problem in the case of a strain field involving heavily distorted layers.

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