The implantation of Si ions into undoped high-resistivity GaN films is of interest for the realization of high-performance digital and monolithic microwave integrated circuits. We report the effect of postimplant annealing conditions on the electrical, optical, and surface morphology of Si ion-implanted GaN films. We demonstrate high activation efficiencies for low-dose Si implants into unintentionally doped GaN/sapphire heteroepitaxial films. The Si ions were implanted through an epitaxial AlN cap layer at 100 keV and a dose ∼5×1014 cm−2. Samples were subsequently annealed in an open-tube furnace for various times and temperatures. The postanneal electrical activation is correlated with the surface morphology of the film after annealing. The samples annealed at 1150 °C in N2 for 5 min. exhibited a smooth surface morphology and a sheet electron concentration ns∼6.8×1013 cm−2.

Ion implantation into III-V nitride materials is an important technology for highpower and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (n atoms = 5 × 10 14 cm -2 ) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150°C in N 2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration n s ~ 9.0 × 10 13 cm -2 , corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy ~15 meV.

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