No abstract

No abstract

No abstract

By applying %3 compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of tunneling graphene nanoribbon field-effect transistor (T-GNRFET), we propose a new local-strained source and channel (LSSC) T-GNRFET. Quantum simulations of the proposed structure have been done in mode-space non-equilibrium Green's function (NEGF) approach in ballistic regime. Simulation results show that in comparison with the conventional T-GNRFET of the same dimensions, the ONcurrent of the proposed structure has been improved considerably. Besides, the proposed structure enjoys better analog characteristics such as transconductance (g m ) and unity-gain frequency (f t ).

In this article, a detailed performance comparison is made between ballistic and dissipative quantum transport of metal oxide semicondutor-like graphene nanoribbon field-effect transistor, in ON and OFF-state conditions. By the self-consistent mode-space non-equilibrium Green's function approach, inter-and intraband scattering is accounted and the role of acoustic and optical phonon scattering on the performance of the devices is evaluated. We found that in this structure the dominant mechanism of scattering changes according to the ranges of voltage bias. Under large biasing conditions, the influence of optical phonon scattering becomes important. Also, the ambipolar and OFF-current are impressed by the phononassisted band-to-band tunneling and increased considerably compared to the ballistic conditions, although sub-threshold swing degrades due to optical phonon scattering.