Resonant grating-waveguide structures formed with InP/InGaAsP semiconductor materials were tested to show light modulation at a wavelength of 1.55 microm. Narrow, subnanometer resonant spectral bandwidths and a ratio of ref lected intensities between resonance and away from resonance of greater than 50 were measured. For a resonant structure with an area of 3 mm x 3 mm, the modulation frequency reached 5 MHz.

The European XFEL delivers up to 27000 intense (>1012 photons) pulses per second, of ultrashort (≤50 fs) and transversely coherent X-ray radiation, at a maximum repetition rate of 4.5 MHz. Its unique X-ray beam parameters enable groundbreaking experiments in matter at extreme conditions at the High Energy Density (HED) scientific instrument. The performance of the HED instrument during its first two years of operation, its scientific remit, as well as ongoing installations towards full operation are presented. Scientific goals of HED include the investigation of extreme states of matter created by intense laser pulses, diamond anvil cells, or pulsed magnets, and ultrafast X-ray methods that allow their diagnosis using self-amplified spontaneous emission between 5 and 25 keV, coupled with X-ray monochromators and optional seeded beam operation. The HED instrument provides two target chambers, X-ray spectrometers for emission and scattering, X-ray detectors, and a timing tool to correct for residual timing jitter between laser and X-ray pulses.

Two-dimensional arrays of Fresnel zone microlenses were fabricated and coated with antireflection layers by an ion beam sputter deposition technique. The reflection of these lenses was analyzed on the basis of an angular spectrum approach for different substrate materials. A minimum reflectivity as low as 2*10-4 was realized by means of in situ controlled multilayers of TiO2 and SiO2. The lenses have a circular aperture of 2 mm and different focal lengths for the wavelengths of 1.52 and 0.63 mu m, respectively. The kinoform profile in each zone of the Fresnel zone lenses was approximated by an eight-level profile. Such stepped profiles were realized with several masks written with an electron beam and transferred by photolithographic technology. The measurements reveal that the spot sizes of the fabricated microlenses are close to the diffraction-limited values

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