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Short-channel effects in deep-submicrometer SO1 short-channel effect (SCE) and drain-induced barrier lowering MOSFET'S are explored over a wide range of device param-(DIBL') in s o 1 as a function of device DameterS. The eters using two-dimensional numerical simulations. To obtain reduced short-channel effects in SO1 over bulk technologies, the silicon film thickness must be considerably smaller than the bulk junction deDth because of an additional charpe-sharinp ;imulaied is an s o 1 MOSFET with uiifom doping in the channel and source/drain regions. Two different technology generations are simulated. The electrical effective channel phenomenon through the SO1 buried oxide. The opt&al desi& space, considering nominal and short-channel threshold voltage, lengths, L , f f , of the simulated devices are 0.2 pm and 0.1 ilm with gate oxide thicknesses of 7 and 5 nm and maximum shows ample desi@ options for both fully and partially depleted devices, however, manufacturing considerations in the 0.1 pm regime mav favor oartiallv deoleted devices.

Abstruct-Effective inversion electron mobility and several short-channel effects are examined for different channel doping profiles in NMOSFET's with L , f f near 100 nm using device simulators. For given threshold voltage, the effective mobility depends on the doping profile shape when the ionized dopant impurity scattering near the surface is nonnegligible as may be the case with the high doping required for proper scaling to L , f f 5 100 nm. In this regime, super-steep retrograde profiles result in higher effective mobility values than conventional step doping profiles while allowing deeper draidsource junctions.

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