The magnetoresistance of step-edge structures in La0.7Ca0.3MnO3 films was investigated. Step-edge arrays with 200 steps of height 140–200 nm and step separation 20 μm along [110] were fabricated on LaAlO3 substrates by chemically assisted ion-beam etching. Thin La0.7Ca0.3MnO3 films were deposited on the structured substrates by pulsed-laser deposition. Measurements of the large low-field magnetoresistance, the dynamic conductance, and the anisotropic magnetoresistance lead to the proposal of a model of spin-polarized tunneling in a ferromagnet/spin-glass/ferromagnet geometry.

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Articles you may be interested inDirect integration of subwavelength structure on a GaAs solar cell by using colloidal lithography and dry etching process J. Vac. Sci. Technol. B 31, 031202 (2013); 10.1116/1.4798410 Micro-photoluminescence characterizations of GaInAsP/InP single quantum wires fabricated by dry etching and regrowthEtch rates of chemical dry etching ͑CDE͒ of GaAs͑100͒ were determined experimentally in the range from 220 to 475 K and dichlorine pressures up to 0.64ϫ10 Ϫ3 mbar. Model-based understanding of the CDE process is proposed to close the gap between experimental data derived from different setups. With the aid of pseudospecies and carefully selected simplifications all experimental features can be quantitatively explained. The thermal desorption kinetics of dichlorine from the GaAs͑100͒ surface was derived successfully from etch rate data. This model paves the road for an extension to include the ion beam impact influence found in chemically assisted ion beam etching.

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