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An investigation was conducted to characterize film properties of oxygen-rich tetraethylorthosilicate (TEOS) films deposited by single-wafer plasma-enhanced chemical vapor deposition. By increasing the oxygen:TEOS gas ratio from 1:1 to 4:1 and maintaining a reduced gas flow rate, undoped silicon glass (USG) and phosphorus-doped silicon glass (PSG) films exhibited a lower fixed charge, increased Si-O bonding sites, higher compressive film stresses, and higher refractive indexes. The USG and PSG deposition parameters were optimized to achieve a film nonuniformity of <2.7% (hi) and deposition rates of 1500 and 3100 A/mm, respectively.

The initial effect observed during the dezincification of air-passivated «-brass in simulated seawater is the migration of Zn2+ from the alloy, through the passivation layers, to form an overlayer of ZnO. Subsequent layer thickening, selective oxide dissolution, and island formation are also documented. A general mechanism is proposed.Dezincification of Cu-Zn brasses is a classic corrosion problem1 for which the mechanism is still not entirely understood.2 Extensive studies during the early part of this century indicated two possible mechanisms for the process:2 (1) the preferential mi-

We report, for the first time, on the 2-D boundary effects in a high performance 65nm SOI technology with dual Etch Stop Layer (dESL) stressors. 1-D geometry effects, such as poly pitch dependence, and the implications on SPICE models and circuit design are also discussed. It will be shown that PMOS and ring oscillator performance can be significantly enhanced by optimizing the transverse and lateral placement of the dESL boundary.