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Integration of the high-quality GaSb layer on the Si substrate is significant to improve the GaSb application in optoelectronic integration. In this work, the suitable ion implantation fluence of 5×1016 cm-2 H ions for GaSb layer transfer was confirmed. Combined with the strain change and the defect evolution, the blistering and exfoliation processes of GaSb during annealing was revealed in detail. With the direct wafer bonding, the GaSb layer was successfully transferred onto (100) Si substrate covered by 500-nm thickness thermal oxide SiO2 layer. After the post-annealing at 200 ℃, the GaSb layer showed high crystalline quality with only 77 arcsec for the full width at half maximum (FWHM) of the X-ray rocking curve (XRC).