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The III-VI compound semiconductors are important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell as well as ionic batteries. In this paper, In2Se2.7Sb0.3 thin films have been grown by thermal evaporation technique onto a with chemically clean glass substrate. Amorphous nature of the films has been discovered by UV-VIS spectrophotometer. The analysis by absorption spectra within the spectral range 200nm -900 nm has been used for the optical characterization of thin films. From these data the optical constants (absorption coefficient (α), refractive index (η), extinction coefficient (k)) and optical band gap (Eg) are studied. The results were discussed, and reported in detail.

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