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In this letter, hot-carrier-induced on-resistance (R on ) degradation in lateral DMOS transistors with different n-type drift-drain (NDD) region concentration is investigated. Increasing NDD concentration results in greater bulk (I b ) and gate currents (I g ), but R on degradation is improved. Technology computer-aided design simulations reveal that high NDD concentration increases impact-ionization rate in accumulation (related to I b increase) and channel regions (related to I g increase) but reduces impact-ionization rate in spacer region. Charge-pumping data confirm that hot-carrier-induced interface state created in the spacer region is reduced, leading to improved R on degradation in high-NDD-concentration device.

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In this letter, ON-resistance R ON degradation in lateral double-diffused MOS transistors is observed when the device is operated under OFF-state avalanche-breakdown condition. Although interface states and positive oxide-trapped charges are created near the drain, interface-state generation is identified to be the main degradation mechanism. Technology computer-aided design simulation suggests that the driving force of damage is breakdown-induced hole injection. Experimental data show that R ON degradation has the tendency to saturate, in agreement with the saturation of interface-state generation and oxide-trapped charges data extracted by charge-pumping measurement.Index Terms-Avalanche breakdown, high voltage, lateral DMOS (LDMOS), reliability.