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Aluminum oxide layers can provide excellent passivation for lowly and highly doped p-type silicon surfaces. Fixed negative charges induce an accumulation layer at the p-type silicon interface, resulting in very effective field-effect passivation. This paper presents highly negatively charged (Q(ox)=-2.1 X 10(12) cm(-2)) aluminum oxide layers produced using an inline plasma-enhanced chemical vapor deposition system, leading to very low effective recombination velocities (similar to 10 cm s(-1)) on low-resistivity p-type substrates. A minimum static deposition rate (100 nm min(-1)) at least one order of magnitude higher than atomic layer deposition was achieved on a large carrier surfaces (similar to 1 m(2)) without significantly reducing the resultant passivation quality

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New low-temperature inserts compatible with an existing hyperpolarizer were developed to dynamically polarize nuclei in large samples. The performance of the system was tested on 8 ml glassy frozen solutions containing 13C-labeled molecules and doped with nitroxyl free radicals. The obtained 13C low-temperature polarization was comparable to the one measured on 20 times smaller sample volume with only 3-4 times higher microwave power. By using a dissolution insert that fits to the new design, it was possible to obtain about 120 ml of room-temperature hyperpolarized solution. The polarization as well as the molecule concentration was comparable to the values obtained in standard size hyperpolarized samples. Such large samples are interesting for future studies on larger animals and possibly for potential clinical applications.

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