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Tetravinylsilane was used to deposit hydrogenated amorphous silicon carbide (a‐SiC:H) films with vinyl groups as functional species using an RF (13.56 MHz) pulsed plasma. Oxygen gas was mixed in tetravinylsilane to improve the compatibility of a‐SiOC:H thin films with the silicon dioxide component. The oxygen‐to‐total‐flow rate ratio and effective power were the only variable deposition parameters. The deposited films were analyzed by Rutherford backscattering spectrometry, elastic recoil detection analysis, and infrared spectroscopy to determine the elemental composition and chemical structure of the plasma polymer. The chemical structure of the films was correlated with plasma species monitored by mass spectroscopy during the deposition process. The results clarified changes in the chemical structure of the films under the influence of oxygen.

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