Published by the AIP Publishing Articles you may be interested inHigh efficiency and rapid response superconducting NbN nanowire single photon detector based on asymmetric split ring metamaterial Appl. Phys. Lett.

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We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal Al2O3 and Si wafers, and SiO2 and Si3N4 buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850• C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films.

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