Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor-type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used.

Thin, uniform, single-walled carbon nanotube films, made by a simple filtration process, subsequently coated with palladium, are shown to be promising detectors of hydrogen. The films detected hydrogen with relative responses of 20% at 100 ppm and 40% at 500 ppm concentrations. Most of the initial film conductance was recovered within 30 s by exposing the samples to air. This quick and easy recoverability make the Pd-coated nanotubes suitable for practical applications in room temperature hydrogen sensing while consuming only approximately 0.25 mW power. The film fabrication process provides highly reproducible control over the film thickness; an important ingredient for commercial production. In the course of this research strong evidence was obtained indicating that sputter deposition of metal onto the nanotubes, even under very low power, short exposure time conditions, does damage to the nanotubes.

The low frequency noise of single-walled carbon nanotubes is studied over the 77–300K temperature range. Lorentzian shaped spectra along with 1∕f noise spectra have been observed. From the Lorentzian noise components, a range of thermal activation energies from 0.08to0.51eV for the associated fluctuation mechanisms is obtained. From the 1∕f noise spectra, a distribution of activation energies of fluctuation processes ranging from 0.2to0.7eV is derived. These findings indicate that the observed noise spectra are caused by number fluctuations.