Magnetic bimeron, as the in-plane counterpart of the magnetic skyrmion, has potential applications in next-generation spin memory devices due to its lower energy consumption. In this work, the dynamic behavior of a current-driven bimeron in a nanotrack with voltage-controlled magnetic anisotropy (VCMA) is investigated. By adjusting the profile of VCMA, the bimeron can display a diode like unidirectional behavior in the nanotrack. The unidirectional behavior can be modulated by changing the driven current density and width of the VCMA region. The trajectory of bimeron can also be controlled by periodic VCMA region, which can enhance the stability of bimeron and realize high storage density bimeron based information channel.

Skyrmions in synthetic antiferromagnetic (SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density. Here, we theoretically investigate the motion of a skyrmion in a SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR and XOR gates. Several effects including the spin-orbit torque, the skyrmion Hall effect, skyrmion-skyrmion repulsion and skyrmion-edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.

Spin obit torque (SOT) driven magnetization switching has been used widely for encoding consumption-efficient memory and logic. However, symmetry breaking under a magnetic field is required to realize the deterministic switching in synthetic antiferromagnets with perpendicular magnetic anisotropy (PMA), which limits their potential applications. Herein, we report all electric-controlled magnetization switching in the antiferromagnetic Co/Ir/Co trilayers with vertical magnetic imbalance. Besides, the switching polarity could be reversed by optimizing the Ir thickness. By using the polarized neutron reflection (PNR) measurements, the canted noncollinear spin configuration was observed in Co/Ir/Co trilayers, which results from the competition of magnetic inhomogeneity. In addition, the asymmetric domain walls demonstrated by micromagnetic simulations result from introducing imbalance magnetism, leading to the deterministic magnetization switching in Co/Ir/Co trilayers. Our findings highlight a promising route to electric-controlled magnetism via tunable spin configuration, improve our understanding of physical mechanisms, and significantly promote industrial applications in spintronic devices.