† These authors contributed equally to this work Solution-processed organic-inorganic lead halide perovskites have recently emerged as promising gain media for tunable semiconductor lasers. However, optically pumped continuous-wave lasing at room temperature -a prerequisite for a laser diode -has not been realized so far. Here, we report lasing action in a surface emitting distributed feedback methylammonium lead iodide (MAPbI3) perovskite laser on silicon substrate, at room temperature under continuous-wave optical pumping. This outstanding performance is achieved because of the ultra-low lasing threshold of 13 W/cm 2 , which is enabled by thermal nanoimprint lithography that directly patterns perovskite into a high Q cavity with large mode confinement, while at the same time improves perovskite's emission characteristics. Our results represent a major step toward electrically pumped lasing in organic and thin-film materials, as well as the insertion of perovskite lasers into photonic integrated circuits for applications in optical computing, sensing and on-chip quantum information.Since the advent of silicon (Si) photonics, the field of photonic integrated circuit (IC) has progressed significantly over the last few decades [1]. While many photonic components have the potential to be inserted into future electronic-photonic ICs on Si, a critical component -an efficient chip-scale laser on Si -has not been realized because of Si's indirect bandgap. Although III-V/Si lasers formed via wafer bonding of III-V onto Si substrate have been the main candidate, the low yield and high manufacturing cost restrict their further development as light sources for electronic-photonic ICs [2]. An alternative gain medium that is Si compatible is solution-processed organic semiconductors. Although organic lasers cannot compete with inorganic III-V lasers in many performance metrics, they do offer several advantages such as easy wavelength tunability,

Perovskite light emitting diodes (PeLEDs) have drawn considerable attention for their favorable optoelectronic properties. Perovskite light emitting electrochemical cells (PeLECs)-devices that utilize mobile ions -have recently been reported but have yet to reach the performance of the best PeLEDs. We leveraged a poly(ethylene oxide) electrolyte and lithium dopant in CsPbBr3 thin films to produce PeLECs of improved brightness and efficiency. In particular, we found that a single layer PeLEC from CsPbBr3:PEO:LiPF6 with 0.5% wt. LiPF6 produced highly efficient (22 cd/A) and bright (~15000 cd/m 2 ) electroluminescence. To understand this improved performance among PeLECs, we characterized these perovskite thin films with photoluminescence (PL) spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD).These studies revealed that this optimal LiPF6 concentration improves electrical double layer formation, reduces the occurrence of voids, charge traps, and pinholes, and increases grain size and packing density. TOC GRAPHICSPerovskite light-emitting diodes (PeLEDs) based on inorgano−organometallic halide perovskites, such as CH3NH3PbX3 and CsPbX3 (X = Cl, Br, or I), have attracted much attention due to their low-temperature solution processability, high color purity with narrow spectral width (FWHM of 20 nm), band gap tunability and large charge carrier mobility. [1][2][3][4] To date, devices based on these perovskites have achieved high luminance in excess of 10000 cd/m 2 with high efficiencies (EQE ~10%), comparable to organic LEDs and quantum dot (QD) LEDs. [1][2][3][4][5][6][7] Interestingly, effects such as hysteresis and high capacitance in perovskite semiconductor devices suggest that ion motion can largely influence device operation. In this vein, researchers have recently been investigating perovskite materials in light-emitting electrochemical cell (LEC) architectures instead of traditional LEDs. [8][9][10][11] These LEC devices (PeLEC leverage ion redistribution to achieve balanced and high carrier injection, resulting in high electroluminescence efficiency. Due to this mechanism, LEC devices can be prepared from a simple architecture consisting of a single semiconducting composite layer sandwiched between two electrodes. In addition, they can operate at low voltages below the bandgap, yielding highly efficient devices.Recently, perovskite LECs (PeLECs) have been reported and show promise as electroluminescent devices. [8][9][10][11] However, these PeLECs are generally limited to luminance maxima of 1000 cd/m 2 or lower, below what has been typically observed in PeLEDs. This disparity suggests that further understanding and refinement of PeLEC materials and devices could produce significant improvements of brightness, efficiency, and other performance metrics. To this end, we fabricated a highly efficient (22 cd/A) and bright (~15000 cd/m 2 ) single layer LEC based on a cesium lead halide perovskite, CsPbBr3. To achieve...

We produced poro-us poly(ε-caprolactone) (PCL)/hydroxyapatite (HA) composite scaffolds for bone regeneration, which can have a tailored macro/micro-porous structure with high mechanical properties and excellent in vitro bioactivity using non-solvent-induced phase separation (NIPS)-based 3D plotting. This innovative 3D plotting technique can create highly microporous PCL/HA composite filaments by inducing unique phase separation in PCL/HA solutions through the non-solvent-solvent exchange phenomenon. The PCL/HA composite scaffolds produced with various HA contents (0 wt %, 10 wt %, 15 wt %, and 20 wt %) showed that PCL/HA composite struts with highly microporous structures were well constructed in a controlled periodic pattern. Similar levels of overall porosity (~78 vol %) and pore size (~248 µm) were observed for all the PCL/HA composite scaffolds, which would be highly beneficial to bone tissue regeneration. Mechanical properties, such as ultimate tensile strength and compressive yield strength, increased with an increase in HA content. In addition, incorporating bioactive HA particles into the PCL polymer led to remarkable enhancements in in vitro apatite-forming ability.

Transition metal dichalcogenides (TMDs) have attracted intensive attention due to their atomic layer-by-layer structure and moderate energy bandgap. However, top-gated transistors were only reported in a limited number of research works, especially transistors with a high-k gate dielectric that are thinner than 10 nm because high-k dielectrics are difficult to deposit on the inert surface of the sulfide-based TMDs. In this work, the authors fabricated and characterized top-gated, few-layer MoS2 transistors with an 8 nm HfO2 gate dielectric. The authors show that the cleaning effect of ultrahigh vacuum annealing before high-k deposition results in significantly reduced gate leakage current of HfO2, and they show that N2 or a forming gas anneal after device fabrication affects the threshold voltage, drive current, dielectric leakage, and C-V frequency dependence. This work demonstrates how the fabrication process can affect the yield and the electrical characterization of top-gated TMD transistors, which in effect can help researchers further enhance the performance of their devices.

Hybrid organic–inorganic lead halide perovskites have attracted much attention in the field of optoelectronic devices because of their desirable properties such as high crystallinity, smooth morphology, and well-oriented grains. Recently, it was shown that thermal nanoimprint lithography (NIL) is an effective method not only to directly pattern but also to improve the morphology, crystallinity, and crystallographic orientations of annealed perovskite films. However, the underlining mechanisms behind the positive effects of NIL on perovskite material properties have not been understood. In this work, we study the kinetics of perovskite grain growth with surface energy calculations by first-principles density functional theory (DFT) and reveal that the surface energy-driven preferential grain growth during NIL, which involves multiplex processes of restricted grain growth in the surface-normal direction, abnormal grain growth, crystallographic reorientation, and grain boundary migration, is the enabler of the material quality enhancement. Moreover, we develop an optimized NIL process and prove its effectiveness by employing it in a perovskite light-emitting electrochemical cell (PeLEC) architecture, in which we observe a fourfold enhancement of maximum current efficiency and twofold enhancement of luminance compared to a PeLEC without NIL, reaching a maximum current efficiency of 0.07598 cd/A at 3.5 V and luminance of 1084 cd/m2 at 4 V.