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A method for fast and efficient deep anisotropic etching of bulk silicon, using parallel capacitively coupled plasma is presented. The effects of the masking materials and RIE conditions are discussed. Based on the experimental results, a 1000 Å thick Al film sufficiently protects the unexposed substrate while allowing the etching of a 350µm deep hole with an area of 3x3mm 2 when etching with SF 6 /CHF 3 /O 2 plasma. A 2000µm long and 100µm wide (with layers of Al/SiO 2 /Si and thickness of 0.1µm/2.2µm/40µm respectively) cantilever has been achieved. A silicon etch rate up to 2.5 to 2.8µm/min has been obtained and an anisotropy of A = 0.5 (A=1-V/H, where V=horizontal undercut, H=etch depth) has been obtained. The technique was developed mainly for bulk micromachining of silicon or composite silicon cantilever structures.

This paper describes a feasibility study of creating a small low friction and low maintenance generator using a diamagnetically stabilized levitating rotor. The planar rotor described in this paper uses a triangular configuration of magnets that generates emf by passing over coils placed below the rotor. Equations were developed to predict the generated emf from coils with two different coil geometries. Additionally, this paper provides a method for estimating optimal coil size and position for the planar rotor presented for both segmental arc and circular coils to obtain maximum power output. Experiments demonstrated that the emf generated in the coils matches well with the predicted wave forms for each case, and the optimization theory gives good prediction to outcome of induced waveforms. For the segmental arc coil design, the induced emf was 1.7 mV at a radial frequency of 21.8 rad/s. For the circular coil design, the emf was 1.25 mV at a radial frequency of 28.1 rad/s.

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