The phenomenon of electromagnetically induced quantum coherence is demonstrated between three confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms of all three states being simultaneously driven into "phase-locked" quantum coherence by a single coupling field. We describe the effect theoretically with a density matrix method and an adapted linear response theory.

The refractive index of GaAs has been measured in the wavelength range from 0.97 to 17 μm, which covers nearly the entire transmission range of the material. Linear and quadratic temperature coefficients of the refractive index have been fitted to data measured between room temperature and 95 °C. In the midinfrared, the refractive index and temperature dependence are obtained from analysis of etalon fringes measured by Fourier-transform spectroscopy in undoped GaAs wafers. In the near infrared, the refractive index is deduced from the quasiphasematching (QPM) wavelengths of second-harmonic generation in orientation-patterned GaAs crystals. Two alternative empirical expressions are fitted to the data to give the refractive index as a function of wavelength and temperature. These dispersion relations agree with observed QPM conditions for midinfrared difference-frequency generation and second-harmonic generation. Predictions for various nonlinear optical interactions are presented, including tuning curves for optical parametric oscillators and amplifiers. Also, accurate values are predicted for QPM conditions in which extremely large parametric gain bandwidths can be obtained.

We report the wavelength dependencies of the two- and three-photon absorption coefficients of undoped GaAs in the spectral range 1.3-3.5 microm, as well as nonlinear refractive index n2 in the range 1.7-3.25 microm. The data were obtained by using the single-beam Z-scan method with 100-fs-long optical pulses. Anisotropy of the three-photon absorption coefficient was observed and found to be consistent with the crystal symmetry of GaAs.

A ZnGeP>(2) (ZGP) optical parametric oscillator (OPO) with wide mid-IR tunability has been demonstrated. The singly resonant angle-tuned ZGP OPO was pumped by 100-ns erbium laser pulses at lambda =2.93mum and yielded output that was continuously tunable from 3.8 to 12.4 mum (type I phase matching) and from 4 to 10 mum (type II phase matching). An OPO pump threshold was less than 1 mJ in the whole 4-12 mum range of the output, and the quantum conversion efficiency reached 35%. An OPO linewidth was typically a few wave numbers; however, with a single intracavity etalon (uncoated Si plate) in a type II OPO it was narrowed to <0.5cm(-1). We demonstrate the sensitive detection of N(2)O gas with the narrow-linewidth OPO.

We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilizes an all-epitaxially-grown orientation-patterned GaAs crystal that is 0.5 mm thick, 5 mm wide, and 11 mm long, with a domain reversal period of 61.2 microm. Tuning either the near-IR pump wavelength between 1.8 and 2 microm or the temperature of the GaAs crystal allows the mid-IR output to be tuned between 2.28 and 9.14 microm, which is limited only by the spectral range of the OPO mirrors. The pump threshold of the singly resonant OPO is 16 microJ for the 6-ns pump pulses, and the photon conversion slope efficiency reaches 54%. We also show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.