NF 3 was applied in the reactive ion etching of SiC. The effects of rf power and NF3 pressure on the etching rate and the surface morphology were investigated by means of scanning electron microscopy and atomic force microscopy. A procedure for getting the smooth and residue-free etched surface of SiC with a high etching rate of 87 nm/min was obtained under the conditions such as rf power of 100 W and NF3 pressure ranging from 0.5 to 1 Pa. A rough surface with spikes was obtained under the NF3 pressures higher than 3 Pa. It was found that the repetitive alternating treatment for the spike-formed and rough surface with the down flow etching using NF3 and Ar plasma sputtering enables us to obtain the smooth surface within the scale of ∼300 nm.

No abstract

No abstract

No abstract

A high-density full color LED (light emmitmg diode) display panel was fabricated using LED anay units whch were mounted many LED chps on silicon microreflectors. The reflector was formed on a (100) silicon wafer by anisotropic chemical etching. The silicon microreflector absorbs the heat generated by the LED chips and improves their light directive characteristics. The three kinds of LEDs (red, green and blue) in a unit are anayed with a matrix structure and the electric contacts between the LED chips, the reflector and the upper cover glass are formed using conducting silver resin.