No abstract

We have developed the method on the enhanced light emission of semiconductors with nanowire type In 2 O 3 films. The nanowire type In 2 O 3 films is deposited by the furnace at low temperature and the radius is about 50 nm. Increasable intensity of GaN LEDs with nanowire type In 2 O 3 film is more than several fold.

Surface-Roughing Method is effective to enhance the efficiency of the light emission of LEDs. We have developed a novel Furnace-Growing Technology of Surface-Roughing Method to enhance external quantum efficiency and control the grain size of Indium oxide (In 2 O 3 ) film on the top layer of GaN LEDs. The deposited Film of Indium oxide on GaNLEDs is crystallitic sharps and high uniformity of the thickness.