Dispersion impairments are a well-known limitation in data center communications, limiting both the usable data rates and reaches. Several companies today adopt silicon photonics as a core technology in their transceiver products. This presents an opportunity for silicon photonics-based dispersion management technologies to be integrated with the transceiver transmitter or receiver. In this manuscript, we present a ring-resonator based, tunable dispersion compensation device, providing dispersion ranging as wide from  + 12.9 × 103ps/nm to −12.3 × 103ps/nm. Thermo-optic tuning from 20°C to 70°C is demonstrated to allow continuous wavelength tuning across 200 GHz. High-speed experiments using 25 Gb/s non-return-to-zero data propagating through 20 km of single mode fiber show that a significant improvement in the eye diagram is achieved after compensation with the ring-resonator device. We demonstrate a significant improvement in the BER from 10−3 to 10−11 for data rates of 25 and 25.78125 Gb/s.

Ultra-silicon-rich nitride with refractive indices ~ 3 possesses high nonlinear refractive index—100× higher than stoichiometric silicon nitride and presents absence of two-photon absorption, making it attractive to be used in nonlinear integrated optics at telecommunications wavelengths. Despite its excellent nonlinear properties, ultra-silicon-rich nitride photonics devices reported so far still have fairly low quality factors of $$\sim 6\times {10}^{4}$$ ∼ 6 × 10 4 , which could be mainly attributed by the material absorption bonds. Here, we report low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N) with lower material absorption bonds, and ~ 2.5× higher quality factors compared to ultra-silicon-rich nitride conventionally prepared with silane-based chemistry. This material is found to be highly rich in silicon with refractive indices of ~ 3.12 at telecommunications wavelengths and atomic concentration ratio Si:N of ~ 8:1. The material morphology, surface roughness and binding energies are also investigated. Optically, the material absorption bonds are quantified and show an overall reduction. Ring resonators fabricated exhibit improved intrinsic quality factors $$\sim 1.5\times {10}^{5}$$ ∼ 1.5 × 10 5 , ~ 2.5× higher compared to conventional silane-based ultra-silicon-rich nitride films. This enhanced quality factor from plasma-deposited dichlorosilane-based ultra-silicon-rich nitride signifies better photonics device performance using these films. A pathway has been opened up for further improved device performance of ultra-silicon-rich nitride photonics devices at material level tailored by choice of different chemistries.

Bragg-soliton dynamics in a 2-stage ultra-silicon-rich-nitride (USRN) chip-based device, consisting of a cladding-apodized modulated Bragg grating (CMBG) stage and a USRN channel waveguide stage, is studied and optimized for enhanced supercontinuum generation. We observe that the enhancement is strongly dependent on the Bragg-soliton effect temporal compression developing in the CMBG stage, which is linked to both device and input pulse parameters. With the optimal parameter combination, a supercontinuum spanning 610 nm at the −30 dB level is experimentally demonstrated in the 2-stage USRN device, representing a 5× enhancement compared to that in a reference waveguide. Good agreement is obtained between the experimentally measured supercontinuum and simulations based on the generalized nonlinear Schrödinger equation and is consistent with design rules based on Bragg soliton compression. This device provides an encouraging path to generate supercontinuum in compact chip-based platforms, which does not need ultrashort, femtosecond scale pulses, greatly relaxing the pulse width and pulse power requirement.

Dispersion compensation is demonstrated using on-chip Silicon Nitride Bragg Gratings. Impaired 30GBaud/s NRZ and PAM4 eye diagrams are restored and a power penalty improvement of 1.3dB at a Bit Error Rate of 10−12 is achieved.

A silicon nitride Bragg grating device is demonstrated to compensate for dispersion in a 20km single-mode fiber. Multiple normal dispersion magnitudes can be accessed in a single stopband with blue detuning at low insertion loss.