GeSbS ridge waveguides have recently been demonstrated as a promising mid – infrared platform for integrated waveguide – based chemical sensing and photodetection. To date, their nonlinear optical properties remain relatively unexplored. In this paper, we characterize the nonlinear optical properties of GeSbS glasses, and show negligible nonlinear losses at 1.55 μm. Using self – phase modulation experiments, we characterize a waveguide nonlinear parameter of 7 W−1/m and nonlinear refractive index of 3.71 × 10−18 m2/W. GeSbS waveguides are used to generate supercontinuum from 1280 nm to 2120 nm at the −30 dB level. The spectrum expands along the red shifted side of the spectrum faster than on the blue shifted side, facilitated by cascaded stimulated Raman scattering arising from the large Raman gain of chalcogenides. Fourier transform infrared spectroscopic measurements show that these glasses are optically transparent up to 25 μm, making them useful for short – wave to long – wave infrared applications in both linear and nonlinear optics.

Broadband supercontinuum (SC) generation requires host material attributes defined by both optical and physical properties and the material’s manufacturability. We review and define the trade-offs in these attributes as applied to fiber or planar film applications based on homogeneous glass property data, and provide a series of examples of how one might optimize such attributes through material compositional and morphology design. As an example, we highlight the role of varying composition, microstructure, and linear/nonlinear optical properties, such as transmittance, refractive index, and the multiphoton absorption coefficient, for a series of novel multicomponent chalcogenide glasses within a model GeSe2-As2Se3-PbSe (GAP-Se) system. We report key optical property variation as a function of composition and form, and discuss how such glasses, suitable for both fiber and planar film processing, could lend themselves as candidates for use in SC generation. We demonstrate the impact of starting glass composition and morphology and illustrate how tailoring composition and form (bulk versus film) leads to significant variation in linear, nonlinear, and dispersive optical property behavior within this system that enables design options that are attractive to optimization of desirable SC performance, based on optical composites.

The formation of optical solitons arises from the simultaneous presence of dispersive and nonlinear properties within a propagation medium. Chip-scale devices that support optical solitons harness high field confinement and flexibility in dispersion engineering for significantly smaller footprints and lower operating powers compared to fiber-based equivalents. High-order solitons evolve periodically as they propagate and experience a temporal narrowing at the start of each soliton period. This phenomenon allows strong temporal compression of optical pulses to be achieved. In this paper, soliton-effect temporal compression of optical pulses is demonstrated on a CMOS-compatible ultra-silicon-rich nitride (USRN) waveguide. We achieve 8.7× compression of 2 ps optical pulses using a low pulse energy of ∼16 pJ, representing the largest demonstrated compression on an integrated photonic waveguide to date. The strong temporal compression is confirmed by numerical calculations of the nonlinear Schrödinger equation to be attributed to the USRN waveguide’s large nonlinearity and negligible two-photon absorption at 1550 nm.

The dispersive nonlinear refractive index of ultra-silicon-rich nitride, and its two-photon and three-photon absorption coefficients are measured in the wavelength range between 0.8 µm–1.6 µm, covering the O- to L – telecommunications bands. In the two-photon absorption range, the measured nonlinear coefficients are compared to theoretically calculated values with a simple parabolic band structure. Two-photon absorption is observed to exist only at wavelengths lower than 1.2 μm. The criterion for all-optical switching through the material is investigated and it is shown that ultra-silicon-rich nitride is a good material in the three-photon absorption region, which spans the entire O- to L- telecommunications bands.

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