The collocation method has been applied to derive a new SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible non-quasi-static MOS (metal-oxide-semiconductor) transient model. Contrasting to the conventional approximation methods, the collocation method is simple for the model derivation and efficient in optimizing the variables of the continuity equation. The derived model is fully physics-based in that all the transient currents are directly expressed by only physically meaningful, optimized quantities. The model adequately predicts transient currents in the bias region such as the weak inversion region where conventional models show numerical difficulties.
A CST Microwave Studio model was generated to simulate the discharge current and the transient fi eld of an ESD generator. The ESD generator is conforming to the IEC 61000-4-2 standard. Individual components of the Noiseken ESD generator (ESS-2000) were modelled, validated and combined. The complete full wave model was verifi ed by comparing the simulated discharge current waveform and induced loop voltage with the measured results.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.