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Parameters influencing the interfacial interaction between liquid gallium and single crystalline gallium arsenide were investigated under vacuum by means of the sessile-drop technique over the temperature range ,-~ 30 to 200~ In addition to their dependence on the anisotropy of the {1 1 1 } planes, contact angles in the Ga(I)lGaAs(s) system were found to be sensitive to the degree of misorientation and the direction of tilt of these planes. Furthermore, contact angles were found to be dependent on the size of the liquid drop and on the surface roughness of the substrate. In agreement with theoretical expectations the measured angles increased with increasing roughness of the GaAs surfaces. However, these angles were found to be unaffected by the presence of N2, Ar, and He atmospheres, and by the nature and concentration of charge carriers in the substrate.

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