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An investigation of the Si0,-Si (n-type) interface is carried out by etching with constant voltage in the electrolytic cell. When the etching front passes the Si0,-Si interface a current peak is observed which may be explained by an excess of Si atoms in the Si-SiO, layer boundary. The Si atom concentration is estimated. Hccnenosame rpamuH paanena Si0,Si (n-wn) nposeaeHo MeTonoM Tpasnen p~ npoxomnemu npoueccoM TpameHm rpamqhr pa3nena Si0,-Si aa6nwnae~cs HHH C JIpHnOWeHMeM IlOCTOIIHHOrO HaIlpIIWeHHE H PJIeKTpOJIMTH' XeCKO~ H ¶eaKe. IIHK TQKB, KOTOPbI@ 06-bHCHEieTCfi HanH ¶HeM H~~~I T O~B~I X aTOMOB si B npurpaHus-HOM C si CJlOe Sio,. nPklBOAHTCR OueHKa KOHueHTpaqMM PTYIX BTOMOB.

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