The superjunction lateral double diffusion metal oxide semiconductor field effect has recently received considerable attention. Introducing heavily doped p-type strips to the n-type drift region increases the horizontal depletion capability. Consequently, the doping concentration of the drift region is higher and the conduction resistance is lower than those of conventional lateral-double-diffusion metal oxide semiconductor field effect transistors (LDMOSFETs). These characteristics may increase breakdown voltage (BV) and reduce specific on-resistance (Ron,sp). In this study, we focus on the electrical characteristics of conventional LDMOSFETs on silicon bulk, silicon-on-insulator (SOI) LDMOSFETs and superjunction LDMOSFETs after bias stress. Additionally, the BV and Ron,sp of superjunction LDMOSFETs with different N/P drift region widths and different dosages are discussed. Simulation tools, including two-dimensional (2-D) TSPREM-4/MEDICI and three-dimensional (3-D) DAVINCI, were employed to determine the device characteristics.

Copper (Cu)/low-k interconnects were fabricated using novel Cu diffusion-barrier SiC films deposited with a novel precursor, 1,1-divinylsilacyclopentane (DVScP). At 46% overetching time, the yield of the via-contact with the dielectric barrier of conventional SiC films was seriously reduced, while that of the novel SiC films was hardly reduced. By using the novel SiC films, the thickness of diffusion barriers was successfully reduced to 15 nm, matching the 32 nm node and beyond. By using the novel SiC films, the dielectric constant of the barrier films was decreased and their thickness was reduced with no yield reduction of the via-contact. As a result, the product of wiring resistance and capacitance (RC product) was reduced by 11.4%. The time-dependent dielectric breakdown (TDDB) lifetime of Cu interconnects with the SiC films was similar to that with the SiCO films. #