Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress

Abstract

The superjunction lateral double diffusion metal oxide semiconductor field effect has recently received considerable attention. Introducing heavily doped p-type strips to the n-type drift region increases the horizontal depletion capability. Consequently, the doping concentration of the drift region is higher and the conduction resistance is lower than those of conventional lateral-double-diffusion metal oxide semiconductor field effect transistors (LDMOSFETs). These characteristics may increase breakdown voltage (BV) and reduce specific on-resistance (Ron,sp). In this study, we focus on the electrical characteristics of conventional LDMOSFETs on silicon bulk, silicon-on-insulator (SOI) LDMOSFETs and superjunction LDMOSFETs after bias stress. Additionally, the BV and Ron,sp of superjunction LDMOSFETs with different N/P drift region widths and different dosages are discussed. Simulation tools, including two-dimensional (2-D) TSPREM-4/MEDICI and three-dimensional (3-D) DAVINCI, were employed to determine the device characteristics.

Modeling and Characteristic Analysis of Silicon-on-Insulator Lateral-Double-Diffusion Metal Oxide Semiconductor

“…[8][9][10] To solve the trade-off relationship between breakdown voltage and onresistance, the concept of superjunction LDMOSFETs is worth considering. 11,12) In this paper, the measurement results presented demonstrate that an LDMOSFET conforms with power devices and other electrical circuits even in SOI silicon substrates. The on-resistance of LDMOSFETs on SOI increases and the threshold voltage decreases with increasing temperature.…”

Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications

“…The trade-off between BV and R on,sp for the simulated SJ-MGFET, fabricated SJ-LDMOSFET and SJ-FinFET are compared with the ideal silicon limit and with several conventional LD-MOSFETs in Fig. 11 Figure 11: Specific on-resistance as a function of the breakdown voltage of the optimised SJ-MGFET compare with reported conventional LDMOSFETs [21,22] and conventional SJ-LDMOSFETs [23,24,25,26] devices.…”