We describe an advanced 0.13pm CMOS technology platform optimized for density, performance, low power and analoghixed signal applications. Up to 8 levels of Copper interconnect with industries first true low-k dielectric (SiLK, k=2.7) [ l ] result in superior interconnect performance at aggressive pitches. A 2.28pm2 SRAM cell is manufactured with high yield by introducing elongated local interconnects on the contact level without increasing process complexity. Trench based embedded DRAM is offered for large area memory. Modular analog devices as well as passive components like resistors, MIM capacitors and intrinsic inductors are integrated. References(1) R. D. Goldblatt et al.: A High Performance 0.13 pm Copper BEOL Technology with Low-k Dielectric, IlTC 2000 (2) L.K. Han et al: A Modular 0.13pm BULK CMOS Technology for High performance and Low Power Applications, VLSI 2000, p. 12 (3) M. Armacost et al: A High Reliability Metal Insulator Metal Capacitor for 0,18 pm Copper Technology, IEDM 2000, p. 157 SiLK is a registixed trademark of The Dow Chemical Company 101 4-891 14-012-7/01 2001 Symposium on VLSI Technology Digest of Technical Papers

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A nonlinear finite element model has been used to simulate the thermally induced viscoplastic deformation of the controlled collapse chip connections (C4) solder joints in a high density single chip module (SCM). The dependence of solder joint deformation on the tin content was demonstrated for various lead-rich lead-tin alloys with the tin content varying from 2 wt.% to 10 wt.%. A thermoviscoplasticity theory was introduced for modeling the inelastic stress-strain response of the Pb-Sn alloys. In the theory, the creep and plasticity were separately considered and formulated. The Garofalo hyperbolic sine law was used to model the creep behavior, while the Prandtl-Reuss equation was used for the rate independent plastic deformation. The modeled SCM consists of a 5-mm silicon chip attached to a 50-nun alumina substrate by an array of C4 with diameter of 0.1 m m on a 0.2-mm YO pitch. A cyclic temperature load of 0-100" C at a frequency of 3 cycles per hour was applied to the SCM. It is concluded that the decrease of the tin content induces a decrease of the equivalent creep strain and Mises stress, but an increase of the equivalent plastic strain for the edge C4 in the SCM.