In this paper, we report on measurements of angular distributions in grazing scattering of Ne and Ar ions incident along the 110 direction of the InGaP (001) surface. In our calculation, we used method of binary collision approximation. The specificity of the theoretical consideration of multiple scattering of ions by atoms on the surface of a solid, associated with the difficulty of describing the interaction of many particles, has led to the widespread use of methods for modeling the scattering process on the computer. Our calculations showed that changes in the fall of bombarding particles lead to a change in the angular distribution. The obtained results show that by the azimuthal scattering angle  on the coordinate of the aiming point we observe some groups of scattered ions: from the surface atomic chain; between the bottom and the surface atomic chain; from the semichannel; from the bottom of the semichannel and the neighboring surface atomic chain; from the neighboring surface atomic chain. Also, it has been shown the dependence of characteristic trajectories on the type and initial energy of incident ions, geometric parameters of the surface. This result is very interesting for the study of surface of semiconductor material.

In this paper presents the computer simulation results on the investigations of the ion scattering processe on the defect InP(001)<110>,<ī10> surface under low-energy grazing ion bombardment have been presented. The peculiarities trajectories of the scattered ions from surface defect, atomic chain and semichannel have been investigated by computer simulation. It was found some trajectories nearby surface atomic chain which have loop shape and a line form. At grazing ion incidence, from a correlation of the experimental and calculated energy distributions of the scattered particles, one may determine a spatial extension of the missing atom on the monocrystal surface damaged by the ion bombardment.

5 keV - energy Ne+ ions are scattered from stepped InP(001)<110> surfaces in grazing incidence. The study of a stepped surface using the ion scattering method is of great interest, since ions are scattered at large angles. For the stepped surface calculated the simple trajectories channeled ions using binary collision approximation method. Calculated energy and angle of ions, which exits from this surface channel. It indicates that at the energy distribution observe intensively peaks, which corresponded to the ions leaved surface channels formed, stepped atoms.

We present in this paper possibility of using glancing incidence ions scattering process for the determination of surface atomic step. We study the grazing scattering of Ne+ stepped InP(001)<ī10> surface in small angle of incidence ions. Additionally, we elaborate on the spectra of energy some intensive maximums formed by ions scattered from the monoatomic surface steps. Based on concrete examples, we also observe the effect of the atomic mass of the stepped atoms on the process of ion scattering. We study the trajectories of ions which scattered from stepped InP(001)<ī10> surface and found that the track of scattered ions have a zig-zag shape. An ion Ne trapped in a channel formed by an atomic step, after passing some distances, dechannels due to a hard collision of one of the atoms forming the basis of the channel. The physical settings of dechannelized Ne ions were analyzed and calculated, and this calculation makes it possible to understand the mechanism of ion dechanneling.