We propose a new structure of power MOSFET, i.e. Super Trench power MOSFET (STM). Instead of a conventional ndrift layer, STM hasvertical P and N layers formed within mesa regions between adjacent trenches filled with insulator. The P and N stripe structure relaxes the electric field[l-3) in off-state and makes possible a lower specific on-resistance (Ron, sp) than that of the conventional MOSFET. We fabricated a 250V STM for the first time with only one additional mask over the conventional DMOS process, and the measured data show high breakdown voltage with highly doped n drift layer. The device simulation results show it should be possible to lower the Ron,sp to 5mQcm' for a breakdown voltage of 300 V. (?Source I O D r a in

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The demand for single photon emitters at λ=1.54  μm, which follows from the consistent development of quantum networks based on optical fiber technologies, makes Er:O centers in Si a viable resource, thanks to the I4→I4 optical transition of Er. While its implementation in high-power applications is hindered by the extremely low emission rate, the study of such systems in the low concentration regime remains relevant for quantum technologies. In this Letter, we explore the room-temperature photoluminescence at the telecomm wavelength from very low implantation doses of Er:O in Si. The lower-bound number of optically active Er atoms detected is of the order of 10, corresponding to a higher-bound value for the emission rate per individual ion of about 10 s.

An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μW range. The 1-μm2 transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈ 4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm.

Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.