Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)

Nitta, T.; Minato, T.; Yano, Maasa; Uenisi, A.; Harada, M.; Hine, S.

doi:10.1109/ispsd.2000.856777

Cited by 36 publications

(13 citation statements)

References 1 publication

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“…The parameters that were used for the single-EPI, double-EPIs, and triple-EPIs structure simulation. Figure 12 compares the specific on-resistance performance of our proposed SGT devices with that of the other middle-voltage devices reported in [4,15,21,[32][33][34][35][36][37][38][39][40], ideal silicon limit, and super junction (SJ) limit for cell pitch = 5 and 10 µm in the 50-200 V range. Form Figure 12, we observe that the triple-EPIs structure and those using a double split-gate device [15] and stepped oxide SGTs [18,20,21] can achieve a very low R on,sp in the middle-voltage range because they all can maintain more uniform EF distributions between two trenches.…”

Section: Devicementioning

confidence: 99%

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

et al. 2020

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A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (Ron,sp) of a 150 and 200 V SGT power MOSFET, we used a multiple epitaxies (EPIs) structure to design it and compared other single-EPI and double-EPIs devices based on the same fabrication process. We found that the bottom epitaxial (EPI) layer of a double-EPIs structure can be designed to support the breakdown voltage, and the top one can be adjusted to reduce the Ron,sp. Therefore, the double-EPIs device has more flexibility to achieve a lower Ron,sp than the single-EPI one. When the required voltage is over 100 V, the on-state resistance (Ron) of double-EPIs device is no longer satisfying our expectations. A triple-EPIs structure was designed and studied, to reduce its Ron, without sacrificing the breakdown voltage. We used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer. The simulated Ron,sp of a 150 V triple-EPIs device is only 62% and 18.3% of that for the double-EPIs and single-EPI structure, respectively.

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Section: Devicementioning

confidence: 99%

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

et al. 2020

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“…Le concept du transistor DT-SJMOS (Deep Trench SuperJunction MOSFET) se base sur plusieurs publications [43], [44], [45], notamment les travaux de Glenn [46]. En effet, si la Superjonction reste un principe général, les procédés de fabrication de composants se basant sur ce concept sont nombreux.…”

Section: Ii241 Présentation De La Structureunclassified

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Théolier

2010

E.J.E.E

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“…A smoother field profile may be reached by trenching techniques and subsequent filling of the trench or a side wall implantation approach [5]. A conceivable concept is the creation of deep trenches in an n-doped substrate and coating or implanting the trench side walls with pdoping materials.…”

Section: Compensation Devicesmentioning

confidence: 99%

Compensation devices versus power MOS and high speed IGBT - a device physics based guideline for the application

Deboy

Purschel

Schmitt

et al. 2001

31st European Solid-State Device Research Conference

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This article focuses on the advantages and technological challenges of state-ofthe-art power devices for fast switching applications. It covers the power MOSFET, the high speed IGBT and the recently introduced compensation devices with 600 V blocking capability. Special emphasis is laid on the charge compensation principle.The device physics of all concepts are discussed in detail with respect to different operating conditions. The special requirements of compensation devices as well as todays and conceiveable future fabrication technologies are presented. The article concludes with a comparison of the discussed device concepts in a major application.

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Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)

Cited by 36 publications

References 1 publication

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Compensation devices versus power MOS and high speed IGBT - a device physics based guideline for the application

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