SummaryStatic random access memory (SRAM)‐based cache memory is an essential part of electronic devices. As the technology node reduces, the power loss and stability has become the major problems. Several SRAM cells had been developed to address the stability and power loss problem. But still, it is a challenge to achieve balance performance among all the parameters of the SRAM cell for sub‐nanometer technology. This paper proposes a novel SRAM cell, which is having comparatively less total, static power loss, less delay, and high stability compared with the conventional cells for 45‐nm complementary metal‐oxide‐semiconductor (CMOS) technology. The total power cost of the proposed 10T cell has been reduced by 90.3%, 85.84%, 51.02%, and 90.9% compared with 6T, N‐controlled (NC), 10T sub, and 10T, respectively. Similarly, the static power cost of the proposed cell has been reduced by 55.17%, 5.72%, ‐41.6%, and 52.9% compared with 6T, NC, 10T‐sub, and 10T, respectively. The proposed cell provides better stability, less delay, and comparable area compared with other considered 10T cells. Finally, the Monte Carlo (MC) simulation and process analysis of SRAM cells validate the efficiency of the proposed 10T cell.

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