We find a new solution of type-IIB supergravity which represents a collection of D5-branes wrapped on the topologically non-trivial S 3 of the deformed conifold geometry T * S 3 . The type-IIB solution is obtained by lifting a new solution of D = 7 SU(2) L × SU(2) R gauged supergravity to ten dimensions in which SU(2) D gauge fields in the diagonal subgroup are turned on. The supergravity solution describes a slice of the Coulomb branch in the large-N limit of N = 2 SYM in three dimensions.

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We investigated electrostatic potential distributions in source∕drain extensions (SDEs) in metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using state-of-the-art junction formation technology. We first demonstrate that electron holography can directly reveal potential distribution in scaled MOSFETs when specimen preparation artifacts are reduced, which we did by using back side low-energy Ar ion milling. Second, we examine the potential distributions in SDEs in a scaled (30-nm-gate-length) MOSFET fabricated by using a combination of cluster B implantation, millisecond annealing, and multihalo implantation. The results show that these junction formation technologies enable fabrication of very abrupt and shallow (10-nm-deep) SDE junctions. In addition, our experimental analysis, in conjunction with a Monte Carlo doping-process simulation, indicates that B channeling along the ⟨110⟩ direction of the Si substrate during the implantation process significantly blurs the SD junction profiles and that multihalo implantation can increase junction abruptness. Third, we show that our experimental results describe well the roll-off characteristics of the MOSFETs.

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We propose a self-selected smallest set-voltage cell (4S-cell) to realize three-fold improvement of the set-voltage (V set ) variability of Cu atom switches. In the cell, switches are connected in parallel and the switch with the smallest V set is automatically selected, resulting in smaller V set variability. For practical application, a split-electrode structure is introduced. The 4S-cells of 2-in-1 by using a split electrode without any increase in cell area reduced the 6σ of V set with an equivalent σV set of 28 mV. The developed 4S-cell enables very-large-scale integration of atom switches for embedded memory and routing switch applications used in ultra-low-power systems-on-chips for wireless sensor node applications.