Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal–Oxide–Semiconductor Field-Effect Transistors

Abstract

We find a new solution of type-IIB supergravity which represents a collection of D5-branes wrapped on the topologically non-trivial S 3 of the deformed conifold geometry T * S 3 . The type-IIB solution is obtained by lifting a new solution of D = 7 SU(2) L × SU(2) R gauged supergravity to ten dimensions in which SU(2) D gauge fields in the diagonal subgroup are turned on. The supergravity solution describes a slice of the Coulomb branch in the large-N limit of N = 2 SYM in three dimensions.

Super-resolution phase reconstruction technique in electron holography with a stage-scanning system

“…The successful developments of field-emission electron guns and electron biprisms make the use of electron holography practical. [7][8][9][10][11][12][13] Fourier transformation is commonly used for the phase-retrieval in electron holography, that is, the electron hologram is Fourier transformed, and then its selected sideband is inversely Fourier transformed. However, the spatial resolution of the reconstructed phase image is limited by the fringe spacing of the hologram.…”

Field mapping of focused ion beam prepared semiconductor devices by off-axis and dark field electron holography

“…To give the reader an idea of the energies and dose used the approximate ranges are an implantation energy of 1-5 kV with a dose of the order 10 15 cm −2 for the LDD implants and an implantation energy between 10-100 kV with a dose of the order 10 13 cm −2 for the pocket implants. For the mapping of the electrostatic potentials, both scanning surface spreading resistance microscopy (SSRM) [5,6] and off-axis electron holography [7][8][9][10][11] have been used successfully to provide valuable device studies, however, the problem for both of these techniques has been specimen preparation. SSRM is an AFM based technique which uses a boron-doped diamond probe to scan the surface of a specimen and then measure the spreading resistance, however, it requires either cleaving and/or polishing to provide the samples and therefore lacks the site specificity that is required for the examination of real devices or for failure studies.…”