As ULSI technology continues to advance, semiconductor manufacturers are facing new contamination control and monitoring challenges, including airborne molecular contamination (AMC). AMC is being recognized as one of the yield limiting factors in newer generation microelectronics fabrication processes. A major AMC source, materials' outgassing can introduce a variety of organic contaminants into semiconductor fabs, impacting many processes. This paper provides a brief overview of typical organic outgassing contaminants, their sources, process impacts and analytical techniques used to detect these species. In addition, outgassing study results for polycyclodimethylsiloxanes and several other contaminants using thermal desorption-gas chromatography-mass spectrometry (TD-GC-MS) analysis are employed to demonstrate the relationships among (1) outgassing level and outgassing time (linear), (2) outgassing quantity and the inverse of outgassing temperature (logarithmic), and (3) outgassing quantity and material surface area (linear). A new method, based on gas diffusion conductivity detection, for ammonia and volatile amines' outgassing analysis is also presented.Organic contaminants can affect semiconductor processing in a variety of ways. Tamaoki, et al.,
Measuring magnetic field and current distribution in Z-pinch plasma systems is crucial to the validation of Z-pinch theory. In this letter, the demonstration of proton deflectometry to pulsed-power-driven loads at the mega-amp scale is presented, which is capable of making more detailed field maps in high-density regions of plasmas. In this method, a laser-driven, broad-spectrum, MeV-energy proton beam is directed through a pulsed-power-driven plasma system, and the resulting deflections are measured to examine configuration of magnetic fields and to infer the currents that support them. The technique was first demonstrated on simple short-circuit loads, and the results are in excellent agreement with numerical simulations providing reliable estimates of the field and current configurations. It was then applied to a more complex—radial foil—plasma load. The measurements show unexpected proton deflections that exhibit the complexity of the plasma load and that with further analysis will reveal details about the current and magnetic field topology in this complex configuration.
The soft x-ray Opacity Spectrometer (OpSpec) used on the National Ignition Facility (NIF) has recently incorporated an elliptically shaped crystal. The original OpSpec used two convex cylindrical crystals for time-integrated measurements of point-projection spectra from 540 to 2100 eV. However, with the convex geometry, the low-energy portion of the spectrum suffered from high backgrounds due to scattered x-rays as well as reflections from alternate crystal planes. An elliptically shaped crystal allows an acceptance aperture at the crossover focus between the crystal and the detector, which reduces background and eliminates nearly all reflections from alternate crystal planes. The current elliptical design is an improvement from the convex cylindrical design but has a usable energy range from 900 to 2100 eV. In addition, OpSpec is currently used on 18 NIF shots/year, in which both crystals are typically damaged beyond reuse, so efficient production of 36 crystals/year is required. Design efforts to improve the existing system focus on mounting reliability, reducing crystal strain to increase survivability between mounting and shot time, and extending the energy range of the instrument down to 520 eV. The elliptical design, results, and future options are presented.
A wide variety of z-pinches are host to energetic electron beams whose energies and origins have yet to be sufficiently characterized. Knowing the electron energies and currents of these electron beams can give insight into the mechanism responsible for the acceleration of the electrons to such high energies. Measurements with a magnetic analyzer have been carried out to determine the energy distribution of electron beams on a variety of aluminum wire array z-pinch geometries at the Nevada Terawatt Facility at the University of Nevada, Reno. These measurements show that as the geometry of the wire array is changed so that the initial angle of inclination, or necking shape, is enhanced, there is an increase in electron beam activity and electron energies. Measurements such as these can be useful to benchmark spectroscopic techniques used to characterize these energetic beams and give insight into the mechanisms responsible for the generation of such energetic beams in z-pinch plasmas.
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