This study employs social network analysis to map the Canadian network of carbon-capital corporations whose boards interlock with key knowledge-producing civil society organizations, including think tanks, industry associations, business advocacy organizations, universities, and research institutes. We find a pervasive pattern of carbon-sector reach into these domains of civil society, forming a single, connected network that is centered in Alberta yet linked to the central-Canadian corporate elite through hegemonic capitalist organizations, including major financial companies. This structure provides the architecture for a "soft" denial regime that acknowledges climate change while protecting the continued flow of profit to fossil fuel and related companies.

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A novel speckle technique, subfeature speckle interferometry, is introduced that relies on the amplitude interference of two independent speckle patterns, originating from coherent illumination, by use of an optical system that produces interferometric quality interference fringes on a scale comparable with the speckle correlation length. Examples are given for in-plane translation, sample tilt, and temperature measurement (strain). A temperature measurement accuracy sigma = 0.92 degrees C is realized. In contrast to traditional full-field speckle crosscorrelation techniques, this technique requires only a small number of detector elements with minimal signal processing and is compatible with many real-time sensor applications.

In situ fiber optic thermometry of wafer surface etched with an electron cyclotron resonance source A noncontact temperature measurement technique, diffraction-order analysis, based on monitoring the change in diffraction angle from a grating as a result of thermal expansion, is described and results for both Si and GaAs are presented. Two incident beams are used to provide a differential measurement, independent of wafer tilt. Image processing techniques are used to calculate the relative temperature in near real time from the optical signals. Good agreement between optical and the thermocouple temperature measurements is obtained, with an accuracy and precision of Ϯ0.3°C demonstrated over a 20-600°C temperature range for a GaAs sample. Analysis of the effects of all six rigid-body motions of the wafer on the measurement is presented. The measurement is independent of all translational motions; rotational motions ͑pitch, roll, and yaw͒ can all be monitored with the same measurement scheme and the temperature measurement corrected for their effects. In many applications in semiconductor manufacturing, wafers are rotated to ensure uniformity. The diffraction-order analysis technique is demonstrated for a rotating wafer with a 3 precision of 1.95°C.