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Efficient prediction of the air quality response to emission changes is a prerequisite for an integrated assessment system in developing effective control policies. Yet, representing the nonlinear response of air quality to emission controls with accuracy remains a major barrier in air quality-related decision making. Here, we demonstrate a novel method that combines deep learning approaches with chemical indicators of pollutant formation to quickly estimate the coefficients of air quality response functions using ambient concentrations of 18 chemical indicators simulated with a comprehensive atmospheric chemical transport model (CTM). By requiring only two CTM simulations for model application, the new method significantly enhances the computational efficiency compared to existing methods that achieve lower accuracy despite requiring 20+ CTM simulations (the benchmark statistical model). Our results demonstrate the utility of deep learning approaches for capturing the nonlinearity of atmospheric chemistry and physics and the prospects of the new method to support effective policymaking in other environment systems.

The accumulation and extrusion of Ca2+ ions in the pre- and post-synaptic terminals play crucial roles in initiating short- and long-term plasticity (STP and LTP) in biological synapses, respectively. Mimicking these synaptic behaviors by electronic devices represents a vital step toward realization of neuromorphic computing. However, the majority of reported synaptic devices usually focus on the emulation of qualitatively synaptic behaviors; devices that can truly emulate the physical behavior of the synaptic Ca2+ ion dynamics in STP and LTP are rarely reported. In this work, Ag/Ag:Ta2O5/Pt self-doping memristors were developed to equivalently emulate the Ca2+ ion dynamics of biological synapses. With conductive filaments from double sources, these memristors produced unique double-switching behavior under voltage sweeps and demonstrated several essential synaptic behaviors under pulse stimuli, including STP, LTP, STP to LTP transition, and spike-rate-dependent plasticity. Experimental results and nanoparticle dynamic simulations both showed that Ag atoms from double sources could mimic Ca2+ dynamics in the pre- and post-synaptic terminals under stimuli. A perceptron network with an STP to LTP transition layer based on the self-doping memristors was also introduced and evaluated; simulations showed that this network could solve noisy figure recognition tasks efficiently. All of these results indicate that the self-doping memristors are promising components for future hardware creation of neuromorphic systems and emulate the characteristics of the brain.

With the down-scaling of CMOS technology, the design complexity of very large-scale integrated is increasing. Although the application of machine learning (ML) techniques in electronic design automation (EDA) can trace its history back to the 1990s, the recent breakthrough of ML and the increasing complexity of EDA tasks have aroused more interest in incorporating ML to solve EDA tasks. In this article, we present a comprehensive review of existing ML for EDA studies, organized following the EDA hierarchy.

Electrochemical metallization (ECM) cell kinetics are strongly determined by the electrolyte and can hardly be altered after the cell has been fabricated. Solid-state property tunable electrolytes in response to external stimuli are therefore desirable to introduce additional operational degree of freedom to the ECM cells, enabling novel applications such as multistate memory and reconfigurable computation. In this work, we use Ge2Sb2Te5(GST) as the electrolyte material whose solid state is switched from the amorphous(a) to the crystalline(c) phase thermally. Electrical heating too is readily achievable. The resistive switching characteristics of the cells with different GST phases are examined. The magnitude of the high resistance, the SET voltage and the on/off ratio are found to be considerably affected by the solid phase of GST, whereas the magnitude of the low resistance is least affected. Moreover, a transition from volatile to nonvolatile SET switching is only observed for c-GST based cell under prolonged voltage sweep, but not for a-GST based cell. This work provides a springboard for more studies on the manipulation of the ECM cell kinetics by tunable electrolyte and the resulting unprecedented device functionalities.