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In this paper, a 3-mask IPS mode TFT-LCD panel is introduced by using a new ITO patterning process. The key processes are the CHF process and new ITO etch process which is related to selective crystallization on SiNx layer. In addition, the change of etch CD bias direction from 1-dimension to 2-dimension reduces or eliminates the MURA defects in panel due to the variation of the distance between pixel and common electrodes.

We developed In-Plane-Switching (IPS) mode structure with vertically aligned common electrodes for amorphous silicon (a-Si) thin film transistor liquid crystal display (TFT-LCD). We could improve an aperture ratio of the panel with this new structure by the elimination of storage area and compact design. The new vertical structure showed stabilized voltage ripple, DC charge and flicker variation by RC delay reduction and direct voltage driving from every driver IC. The panel was fabricated with the conventional a-Si TFT process. We focused on making a new structure to get better quality of image compared to previous IPS mode TFT-LCD.

A New Cu patterning method, exhibiting better etching characteristics than the conventional wet etching method is introduced. The new Cu patterning process includes plasma treatment and dilute hydrochloric acid (HCl) treatment. with optimized process condition, under 0.3μm of Cu etch critical dimension bias was obtained. We have successfully fabricated Cu source/drain line for 15.0‐inch XGA LCD panel using this patterning method.

We proposed a new mechanism of interaction between rotation of filaments in the rubbing cloth and structure of patterns on the substrate. Using this mechanism, we introduced a new method of rubbing which uses two kinds of rubbing cloths to improve the rubbing density. And we obtained that black luminance decrease.