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Velocity overshoot phenomena in Ga0.47In0.53As to the application of uniform electric fields are investigated using recent values of the material parameters. The effects of the ambient temperature and of the doping concentration are studied. The material is found to yield peak drift velocities larger than those in GaAs. The values of the peak velocity are greater for short lengths of the active region, low impurity concentration, and low ambient temperatures.

Hot electron drift velocity in PbTe at 77 K is calculated by the Monte Carlo method up to a field of 3 kV/cm. The nonparabolic anisotropic nature of the band structure and scattering by polar optic, deformation potential acoustic, and intervalley phonons are incorporated. The anisotropy in the velocity field characteristics is studied by considering fields parallel to the 〈100〉 and 〈110〉 directions. The calculated results are in good agreement with the experimental data in the prebreakdown region. Contrary to a previous result, no negative differential resistance is found to appear in the breakdown region considering transport in the L valleys only.