2014 Les concentrations d'électrons et de donneurs, et les mobilités des porteurs des couches de GaP non dopées, préparées par l'épitaxie de phase liquide sont étudiées en fonction du traitement thermique précédant la croissance. Les donneurs principaux ou la présence de plus d'un donneur sont identifiés par les énergies d'ionisation des donneurs. On observe une incorporation de soufre après de courts traitement thermiques, tandis qu'après de longs traitements thermiques, on observe une incorporation de silicium. Abstract. 2014 Electron and donor concentrations and mobilities of non doped liquid phase epitaxial GaP layers were studied when varying the annealing process prior to growth. Main donors or the presence of more than one donor were identified by donor ionization energies. After short anneallings the incorporation of sulphur, after long annealings the incorporation of silicon were observed.

Electron mobility was measured in liquid phase epitaxial GaAs of moderate purity. The relevant charge carrier scattering mechanisms were investigated. It is found that the measured mobility can only be interpreted taking into account scattering on space‐charge regions besides lattice and impurity scattering. The implications of space‐charge scattering are discussed and it is suggested that this scattering mechanism is an almost universally occurring phenomenon in GaAs and presumably in other compound semiconductors, too.

No abstract