Abstruct-MOSFET's with ultrathin (5 to 8.5 nm) silicon oxynitride gate film prepared by low-pressure rapid thermal chemical vapor deposition (RTCVD) using SiH4, NzO and NH3 gases, are studied by low-frequency noise measurements (1 Hz up to 5 kHz). The analysis takes into account the correlated mobility fluctuations induced by those of the interfacial oxide charge. The nitrogen concentration, determined from SIMS analysis, varies from 0 to 11% atomic percentage. A comparison of the electrical properties between thermal and silicon oxynitride films is presented. The increasing LF noise signal with nitrogen atomic percentage indicates the presence of a higher density of slow interface traps with increasing nitrogen incorporation. Besides, a higher Coulomb scattering rate due to the nitridation induced interface charge explains reasonably well the degradation of the low field mobility after nitridation.

No abstract

No abstract

No abstract

No abstract