Background and objectives Bilateral upper limb training (BULT) and unilateral upper limb training (UULT) are two effective strategies for the recovery of upper limb motor function after stroke. This meta-analysis aimed to compare the improvements in motor impairment and functional performances of people with stroke after BULT and UULT. Research design and methods This systematic review and meta-analysis identified 21 randomized controlled trials (RCTs) met the eligibility criteria from CINAHL, Medline, Embase, Cochrane Library and PubMed. The outcome measures were the Fugl-Meyer Assessment of Upper Extremity (FMA-UE), Wolf Motor Function Test (WMFT), Action Research Arm Test (ARAT) and Box and Block Test (BBT), which are validated measures of upper limb function. Results Twenty-one studies involving 842 subjects with stroke were included. Compared with UULT, BULT yielded a significantly greater mean difference (MD) in the FMA-UE (MD = 2.21, 95% Confidence Interval (CI), 0.12 to 4.30, p = 0.04; I 2 = 86%, p<0.001). However, a comparison of BULT and UULT yielded insignificant mean difference (MD) in terms of the time required to complete the WMFT (MD = 0.44; 95%CI, -2.22 to 3.10, p = 0.75; I 2 = 55%, p = 0.06) and standard mean difference (SMD) in terms of the functional ability scores on the WMFT, ARAT and BBT (SMD = 0.25; 95%CI, -0.02 to 0.52, p = 0.07; I 2 = 54%, p = 0.02). Discussion and implications Compared to UULT, BULT yielded superior improvements in the improving motor impairment of people with stroke, as measured by the FMA-UE. However, these strategies did not yield significant differences in terms of the functional performance of people with stroke, as measured by the WMFT, ARAT and BBT. More comparative studies of the effects of BULT and UULT are needed to increase the reliability of these conclusions.

High performance a‐Si:H TFT with properly SiNx deposition and low deposition rate of a‐Si:H for high stability has been improved. Otherwise, large device dimension accompany milliamperes current caused joule heating degradation device reliability. Fine design for promoting reliability for self‐heating reduction was also investigated. Square‐like a‐Si:H active layer induces higher turn‐on current than rectangular‐like one degraded the device reliability. Applied the good performance TFTs to driver application is good enough for high temperature of 85 °Coperation.

We have investigated device characteristics utilizing top-gate structure to define the electric characteristics and qualities the value of drain-source current. At the same time, the device operation for high drain voltage mechanism was also investigated. The new terminal with positively top gate bias can significantly decrease the reverse sub-threshold leakage current more than one order and keep on 100% Ion improvement for high drain bias operation.