Background: The no-reflow phenomenon (NRP) is a serious complication of primary percutaneous coronary intervention (PPCI) and is an independent predictor of poor prognosis. We aimed to find a simple but effective risk stratification method for the prediction of NRP. Methods: This retrospective single-center study included 454 consecutive patients diagnosed with acute STsegment elevation myocardial infarction (STEMI) and treated by PPCI, who were admitted to our emergency department between January 2017 and March 2019. The patients were divided according to the post-PPCI thrombolysis in the myocardial infarction flow rate: the NRP group and the control group. The CHADS 2 , CHA 2 DS 2-VASc, and CHA 2 DS 2-VASc-HSF scores were calculated for all the patients in this study, and multivariable regression and receiver operating characteristic curve analyses were conducted to determine the independent predictors of NRP and the predictive value of the three scores. Results: A total of 454 patients were analyzed in this study: 80 in the no-reflow group and 374 in the control group. The incidence of NRP was 17.6%. Creatine kinase-myocardial band, Killip class, stent length, and multivessel disease also independently predicted NRP. The CHA 2 DS 2-VASc-HSF score had a higher predictive value than the other two scores, and a CHA 2 DS 2-VASc-HSF score of ≥4 predicted NRP with a sensitivity of 72.5% and specificity of 66.5% (area under the curve: 0.755, 95% confidence interval [0.702-0.808]). Conclusion: Although the CHADS 2 , CHA 2 DS 2-VASc, and CHA 2 DS 2-VASc-HSF scores can all be used as simple tools to predict NRP, our findings show that the CHA 2 DS 2-VASc-HSF score had the highest predictive value. Thus, the CHA 2 DS 2-VASc-HSF score may be an optimal tool for predicting high-risk patients.

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Results of first-principles calculations and experiments focusing on molecular beam epitaxy (MBE) growth of HgCdTe on the alternative substrates of GaAs and Si are described. The As passivation on (2 · 1) reconstructed (211) Si and its effects on the surface polarity of ZnTe or CdTe were clarified by examining the bonding configurations of As. The quality of HgCdTe grown on Si was confirmed to be similar to that grown on GaAs. Typical surface defects in HgCdTe and CdTe were classified. Good results for uniformities of full width at half maximum (FWHM) values of x-ray rocking curves, surface defects, and x values of Hg 1-x Cd x Te were obtained by refining the demanding parameters and possible tradeoffs. The sticking coefficient of As 4 for MBE HgCdTe was determined. The effects of Hg-assisted annealing for As activation were investigated experimentally and theoretically by examining the difference of the formation energy of As Hg and As Te . Results of focal-plane arrays (FPAs) fabricated with HgCdTe grown on Si and on GaAs are discussed.

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